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PD - 97069
IRF7853PBF
HEXFET(R) Power MOSFET
Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
l
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
100 20 8.3 6.6 66 2.5 0.02 5.1 -55 to + 150
Units
V A
c
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
W W/C V/ns C
h
Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
20 50
Units
C/W
ei
--- ---
Notes through are on page 8
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1
1/5/06
IRF7853PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 --- --- 3.0 --- --- --- --- --- 0.11 14.4 --- --- --- --- --- --- --- 18 4.9 20 250 100 -100 nA V m V A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 8.3A
V/C Reference to 25C, ID = 1mA
f
VDS = VGS, ID = 100A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 28 7.8 10 1.4 13 6.6 26 6.0 1640 310 71 1600 180 320 --- 39 --- --- --- --- --- --- --- --- --- --- --- --- --- pF ns VDD = 50V ID = 5.0A RG = 6.2 VGS = 10V VGS = 0V VDS = 25V nC S ID = 5.0A VDS = 50V VGS = 10V
Conditions
VDS = 25V, ID = 5.0A
f
f
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V Max. 610 5.0
g
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 45 84 2.3 A 66 1.3 68 130 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 5.0A, VGS = 0V TJ = 25C, IF = 5.0A, VDD = 25V di/dt = 100A/s
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7853PBF
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
4.5V
0.1
0.01 0.01
4.5V
0.1
60s PULSE WIDTH Tj = 25C
1 10 100
60s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.5
RDS(on) , Drain-to-Source On Resistance
ID = 8.3A
2.0
ID, Drain-to-Source Current()
VGS = 10V
10.0
TJ = 150C
(Normalized)
1.5
1.0
TJ = 25C
1.0
VDS = 25V
0.1 3.0 4.0 5.0
60s PULSE WIDTH
6.0 7.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF7853PBF
100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 5.0A 16
VDS = 80V VDS= 50V VDS= 20V
10000
C, Capacitance (pF)
Ciss
1000
12
Coss Crss
8
100
4
10 1 10 100
0 0 10 20 30 40 50 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100.0
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
10.0
TJ = 150C
100 100sec 10 1msec 10msec Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 1000
1.0
TJ = 25C
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7853PBF
10
VDS
8
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
6
-VDD
10V
4
Pulse Width 1 s Duty Factor 0.1 %
2
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
0
TC , CaseTemperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 A C 3
1
J
Ri (C/W) i (sec) 7.016 0.00474 26.95 16.04 0.04705 2.3619
0.1
1
2
Ci= i/Ri Ci i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta
10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7853PBF
m RDS (on), Drain-to -Source On Resistance ( )
m) RDS (on) , Drain-to-Source On Resistance (
40 VGS = 10V
40
ID = 5.0A
35
30
TC = 125C
30
TJ = 125C
25
20 TC = 25C
20
15
TJ = 25C
10 4 6 8 10 12 14 16
10 0 10 20 30 40 50 60 70 ID , Drain Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
L
0
DUT 1K
VCC
VGS
QGS VG
QG QGD
2500
EAS, Single Pulse Avalanche Energy (mJ)
Charge
2000
ID 0.23A 0.34A BOTTOM 5.0A
TOP
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
1500
1000
15V
V(BR)DSS tp
VDS L
500
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
I AS
tp
0.01
Starting TJ, Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF7853PBF
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOTES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
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IRF7853PBF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 49mH, RG = 25, IAS = 5.0A. When mounted on 1 inch square copper board, t 10 sec.
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time ISD 5.0A, di/dt 320A/s, VDD V(BR)DSS, TJ 150C. R is measured at TJ of approximately 90C.
as Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/06
8
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